The Characteristics of the Wafer Bonding between InP Wafers and $\textrm{Si}_3\textrm{N}_4$/InP

Direct Wafer Bonding법에 의한 InP 기판과 $\textrm{Si}_3\textrm{N}_4$/InP의 접합특성

  • Kim, Seon-Un (Division of Materials Science and Metallurgical Engineering Korea University) ;
  • Sin, Dong-Seok (Division of Materials Science and Metallurgical Engineering Korea University) ;
  • Lee, Jeong-Yong (Dept. of Mat. Sci. & Eng. KAIST) ;
  • Choe, In-Hun (Division of Materials Science and Metallurgical Engineering Korea University)
  • 김선운 (고려대학교 재료금속공학부) ;
  • 신동석 (고려대학교 재료금속공학부) ;
  • 이정용 (한국과학기술원 재료공학과) ;
  • 최인훈 (고려대학교 재료금속공학부)
  • Published : 1998.10.01

Abstract

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

n-InP(001)기판과 PECVD법으로 ${Si}_3N_4$(200nm)막이 성장된 InP 기판사이의 direct wafer bonding을 분석하였다. 두 기판을 접촉시켰을 때 이들 사이의 결합력에 크게 영향을 주는 표면 상태를 접촉각 측정과 AFM을 통해서 분석하였다. InP 기판은 $50{\%}$ 불산용액으로 에칭하였을 때 접촉각이 $5^{\circ}$, RMS roughness는 $1.54{\AA}$이었다. ${Si}_3N_4$는 암모니아수 용액으로 에칭하였을 때 RMS roughness가 $3.11{\AA}$이었다. Inp 기판과 ${Si}_3N_4$/InP를 각각 $50{\%}$ 불산 용액과 암모니아수 용액에 에칭한 후 접촉시켰을 때 상당한 크기의 초기 겹합력을 관찰할 수 있었다. 기계적으로 결합된 시편을 $580^{\circ}C$-$680^{\circ}C$, 1시간동안 수소 분위기와 질소분우기에서 열처리하였다. SAT(Scanning Acoustic Tomography)측정으로 두 기판 사이의 결합여부를 확인하였다. shear force로 측정한 InP 기판과 ${Si}_3N_4$/InP사이의 결합력은 ${Si}_3N_4$/InP 계면의 결합력만큼 증가되었다. TEM과 AES를 이용해서 di-rect water bonding 계면과 PECVD계면을 분석하였다.

Keywords

References

  1. IEEE J. Selected Topics in Quantum Electron. v.3 no.3 Z.H.Zhu;Felix E.Ejeckam;Y.Qian;Jizhl Zhang;Zhenjun Zhang;Gina L.Christenson;Y.H.Lo
  2. IEEE J. Selected Topics in Quantum Electron. v.3 no.3 A.Black;A.R.Hawkins;N.M.Margalit;D.I.Babic;A.L.Holmes,Jr;Y.L.Chang;P.Abraham;E.L.Hu
  3. IEEE J. Quantum Electron v.27 no.3 Winston K. Chan;Alfredo Yi-Yan;Thomas J. Gmitter
  4. Appl. Phys. Lett. v.60 no.7 R.Venkatasubramanian;M.L.Timmons;T.P.Humphreys;B.M.Keyes;R.K.Ahrenkiel
  5. Appl. Phys. Lett. v.56 no.8 Z.L.Liau;D.E.Mull
  6. J. Electrochem. Soc. v.142 no.1 Q.Y.Tong;U.Gosele;C.Yuan;A.J.Steckl;M.Reiche
  7. Appl. Phys. Lett. v.62 no.10 Y.H.Lo;R.Bhat;D.M.Hwang;C.Chua;C.H.Lin
  8. Jpn. J. Appl. Phys. v.33 Hirochi Wada;Takeshi Kamijoh
  9. Electron. Lett. v.32 no.16 Y.Ohiso;C.Amano;Y.Itoh;K.Tateno;T.Tadokoro;H.Takenouchi;T.Kurokawa
  10. Appl. Phys. Lett. v.71 no.11 B.F.Levine;A.R.Hawkins;S.Hiu;B.J.Tseng;J.P.Reilley;C.A.King;L.A.Gruezke;R.W.Johnson;D.R.Zolnowski;J.E.Bowers
  11. Jpn. J. Appl. Phys. v.36 Takayuki Sakai;KaZuhiko Shimomura
  12. Appl. Phys. Lett. v.68 no.20 Yae Okuno
  13. Appl. Phys. Lett. v.48 no.1 J.B.Lasky
  14. Pro. IEEE Int. SOI Conf. B.H.Lee;G.J.Bae;K.W.Lee;G.Cha;W.D.Kim;S.I.Lee;T.Barge;A.J.Auberton Herve;J.M.Lamure
  15. IEEE Photon. Technol. Lett. v.6 no.12 Hiroshi WaDa;Yoh Ogawa;Takeshi Kamijoh
  16. Jpn. J. Appl. Phys. v.36 Hideki Yokoi;Tetsuya Mizumoto
  17. J. Electrochem. Soc. v.143 no.7 Brian E. Roberds;Shari N.Farrens
  18. J. Electrochem. Soc. v.142 no.4 Karin Ljungberg;Ylva Backlund;Anders Soderbarg;Mats Bergh;Mats O. Andersson;Stefan Bengtsson
  19. Contact Angle, Wettability and Adhesion Jin-Goo Park;Spini Raghavan;K.L.Mittal(ed.)
  20. Contact Angle, Wettability and Adhesion D.Li;C.NG;A.W.Neumann;K.L.Mittal(ed.)
  21. Advances in Electronic Packaging, EEP v.19-1 Rex T. Gaviol;Rodrogo O.Amor
  22. J. Electrochem. Soc. v.144 no.1 Q.Y.Tong;T.H.Lee;U.Gosele;M.Reiche;J.Ramm;E.Beck
  23. Appl. Phys. Lett. v.62 no.7 Hiroshi Wada;Yoh Ogawa;Takeshi Kamijoh