Abstract
CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be $350^{\circ}C~450^{\circ}C$. The results of compensated donor levels of $O_2$and Si impurites at S-vacancy were identified CdO and $Cd_2SiO_4$defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses $O_2$and Si impurites were due to 2.43eV($350^{\circ}C$) and 2.42eV(55$0^{\circ}C$) peak energies respectively. The structure transition annealing temperature was measured $370^{\circ}C$ similar to Ariza-Calderons result, $374^{\circ}C$ by CBD films.
진공증착법으로 CdS 박막을 제작하여 열처리한 시료를 상온에서 SEM, XRD, EDX와 PL 특성을 측정하여 $50^{\circ}C 와 450^{\circ}C$ 사이에서 cubic to hexagonal phase transition을 확인하였다. 열처리 결과 S-빈자리에 $O_2$와 Si불순물이 보상되어 CdO 또는 $Cd_2SiO_4$주개준위(donor level)를 만드는데 광발광 측정에서 열처리온도 $350^{\circ}C$에서는 2.34eV, $550^{\circ}C$는 2.42eV에서 EE 피이크를 나타내었다. 이러한 특성결과 본 연구에서 결정구조변환 온도는 $370{\circ}C$를 나타내었으며 Ariza-Calderon 등의 CBD박막에 대한 결과인 $374^{\circ}C$와 유사한 것으로 확인되었다.