Abstract
The nonlinear susceptibilities of the porous silicon surface were determined from the second harmonic generation. The value of nonlinear susceptibility, ${\chi}^{(2)}_{zzz}$ was $1.04{\times}10_{-7}$ esu which had an intensity of two orders of magnitude greater than that of silicon crystal wafers. The orientation angle of absorbed molecules on the porous silicon surface was ${16.8}^{\circ}$.
제 2고조파 발생으로부터 다공질 규소의 표면에서 비션형 광학감수율 ${\chi}^{(2)}_{zzz}$을 측정한 결과 그 크기는 단결정 규소에 비하여 약 100배 증가한 $1.04{\times}10_{-7}$ esu 임을 얻었으며, 다공질 질소 위에 흡착된 분자의 방향이 ${16.8}^{\circ}$로 관측되었다.