Abstract
Transition metallic $Cr^{3+}$ ion was diffused in white sapphire {0001}, ${10\bar{1}0}$
crystal plane which were grown by the Verneuil, it enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion powder. When it was used the mixing powder of metal and metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under $1{\times}10^{-4}$ torr of vacuum pressure at $2050^{\circ}C$, first step, it were kept by the diffusion condition of 6 atm of $N_{2}$ accelerating pressure at $2050~2150^{\circ}C$. Each surface density of sapphire crystal are 0.2254(c) and $0.1199\;atom/{\AA}^2(a)$. The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in the plane of ${10\bar{1}0}$ than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.
Verneuil 법에 의해 성장된 무색 sapphire {0001}, ${10\bar{1}0}$ 결정면에 전이금속 Cr을 확산시키고, 물리적, 전기적, 광학적 특성을 개선하였다. 확산분말은 금속산화물 분말과 금속분말을 혼합한 후 사용하였다. 혼합분말을 사용하였을 때 확산은 오랜시간 높은 온도를 필요로 하며 상대적으로 서서히 이루어 졌다. 금속분말은 $1{\times}10^{-4}$ torr, $2050^{\circ}C$의 조건에서 1차 기화하였고 이후 $2050~2150^{\circ}C$, 질소가압 6 atm의 확산조건에서 유지하였다. 사파이어의 표면밀도는 0.2254(c)와 $0.1199\;atom/{\AA}^2(a)$이었다. 확산이 이루어진 sapphires는 붉은색으로 변하였다. 고용반응은 ${10\bar{1}0}$ 결정면이 {0001} 보다 더욱 깊게 확산되었고, 면밀도가 확산효과를 결정하는 주요인자이었다.
