Abstract
$Cd_{1-x}Mn_xTe$ thin films were grown on GaTs (100) substrates by hot-wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100)film was grown as a single crystal with the same growth plane of (100) and $Cd_{1-x}Mn_xTe$film as a poly crystal as Mn content was increased, and the lattice constant was decressed with the similar gradient of bulk crystal as x was increased. From the PL measurements, $L_1$line due to the exciton trapped on an acceptor and $L_2$line due to an exciton trapped on a shallow potential fluctuation were observed, and $L_1$line was observed only in $Cd_{0.91}Mn_{0.09}$te but it was disappeared probably due to a stronger lacalization of excitons with increasing alloy fluctuation.$L_2$line was dominant in case of $x{\ge}0.2$and for higher Mn contents the broad transition about 2.0eV associated to the 3d levels of the $Mn^{2+}$ ion dominated the PL spectrum, and the $L_2$ transition become weaker and weaker. For$x{\ge}0.4$, the transition line about 2.0eV due to $Mn^{2+}$ion showed no shift.
Hot-wall epitaxy법으로 $Cd_{1-x}Mn_xTe$박막을 GaAs (100) 기판위에 성장시켰다. XRD 측정으로부터 CdTe/GaAs(100) 박막은 기판과 같은 (100)면의 단결정 박막으로, $Cd_{1-x}Mn_xTe$박막은 Mn의 조성비 x가 증가함에따라 다결정 박막으로 성장되었으며, 박막의 격자상수는 x의 증가에 따라 덩어리 결정의 경우와 비슷한 기울기로 감소함을 확인하였다. x의 변화에 대한 $Cd_{1-x}Mn_xTe$ 박막의 PL 측정으로부터 받개와 퍼텐셜 요동에 의하여 포획된 엑시톤의 재결합 피크인 $L_1$과 $L_2$를 관측하였으며, $L_1$피크는 x=0.09 시료에서만 관측되었고 x값이 증가하면 사라졌다. x $\ge$0.2의 경우에는 $L_2$피크가 강하게 나타나고 x$\ge$ 0.4에서는 $Mn^{2+}$이온의 intra 천이에 의한 2.0eV 근처의 피크가 강하게 나타났다. x>0.4에서 $Mn^{2+}$이온에 의한 2.0eV 피크는 pinning이 일어나 변화가 거의 없이 일정하였다.
