초록
Czochralski법으로 성장시킨 조화용융조성(48.6 mol%$LiNbO_3$)의 undoped 및 MgO-doped $LiNbO_3$ 단결정 내의 미소결함을 광학현미경 및 주사/투과 전자현미경을 이용하여 정밀분석하였다. Dopant 첨가 및 성장된 부위(g)에 따른 분역구조의 변화와 결함밀도를 측정함으로써 결함양상을 분석하고 최적 결정성장조건과의 상관관계를 고찰하였다. 강자성 분역벽 주변의 높은 결함밀도는 이 근처가 응력이 집중된 영역임을 반영하고, 특히 한쪽 방향의 분역벽에만 결함이 밀집된 결함구조를 가지고 있음을 확인하였다.
Micro-defects in the undoped and MgO-doped $LiNbO_3$ single crystals, which were grown from a congruent melting composition (48.6 mol% $Li_2$O) by the CZ (Czochralski) method, were analyzed using microscopic techniques such as optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Effects of the dopant and g value (the fraction solidfied) on the domain structure and micro-defect were investigated to build a corelationship with a growth condition of crystal. It was observed that the micro-defect concentrated near the domain wall is caused by high stress. Especially, the micro-defect was observed to be biased toward a certain side of the domain wall.
