New mechanism of thin film growth by charged clusters

  • Hwang, Nong-Moon (Creative Research Initiative Center for Microstructure Science of Materials, School of Mater. Sci. & Eng., Seoul National University, Korea Research Institute of Standards and Science) ;
  • Kim, Doh-Yeon (Creative Research Initiative Center for Microstructure Science of Materials, School of Mater. Sci. & Eng., Seoul National University)
  • Published : 1999.06.01

Abstract

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

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References

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