Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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LPE growth of $La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films

  • Tanaka, Isao (Institute of Inorganic Synthesis, Yamanashi University, CREST Project, Japan Science and Technology Corporation(JST)) ;
  • Tanabe, Hideyoshi (Institute of Inorganic Synthesis, Yamanashi University) ;
  • Watauchi, Satoshi (Institute of Inorganic Synthesis, Yamanashi University, CREST Project, Japan Science and Technology Corporation(JST)) ;
  • Kojima, Hironao (Institute of Inorganic Synthesis, Yamanashi University, CREST Project, Japan Science and Technology Corporation(JST))
  • Published : 1999.06.01
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Abstract

$La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films were prepared on bulk single crystals of Zn-doped $La_{2-x}Sr_{x}CuO_{4}$ as the substrates by LPE technique using two deferent methods. When prepared using an alumina crucible in normal electrical furnace, the $La_{2-x}Sr_{x}CuO_{4}$ films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the $La_{2-x}Sr_{x}CuO_{4}$ films, For LPE growth by modified TSFZ method using an infrared heating furnace without crucibles, the $La_{2-x}Sr_{x}CuO_{4}$ films of x=0.11 showed superconducting with $Tc_{onset}=36\;K$, which is 10 K higher than that in the $La_{2-x}Sr_{x}CuO_{4}$ bulk single crystals.

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References

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