Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Synthesis of Silicon Carbide Whiskers (II): Stacking Faults

탄화규소 휘스커의 (II): 적층결함

  • 최헌진 (한국과학기술연구원 복합기능세라믹스 연구센터) ;
  • 이준근 (한국과학기술연구원 복합기능세라믹스 연구센터)
  • Published : 1999.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid(VS), two-stage growth(TS), and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction(XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e., the small diameter whiskers (<1 $\mu\textrm{m}$) grown by the VS, TS, and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers(>2$\mu\textrm{m}$) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers was probably due to the high specific lateral surface area of small diameter whiskers.

2단계 열탄소환원법으로 탄화규소 휘스커를 기상-고상, 2단계, 기상-액상-고상 성장기구로 각각 합성하였다. 그리고 휘스커에 있는 적층결합을 X-ray와 투과전자현미경을 이용하여 분석하였다. 탄화규소 휘스커에 있는 적층결함은 휘스커의 지름과 상관관계가 있는 것으로 나타났다. 즉, 기상-고상, 2단계 성장, 기상-액상-고상 성장기구에 상관없이 지름이 1$\mu\textrm{m}$이하로 작아지는 경우 적층결합이 많아지고, 기상-액상-고상 기구로 성장한 지름이 2$\mu\textrm{m}$보다 큰 경우 적층결함이 거의 없는 것으로 나타났다. 이같은 현상은 휘스커 지름이 작아짐에 따라 휘스커의 비표면적이 증가하는 때문인 것으로 판단되었다.

Keywords

References

  1. Am. Ceram. Soc. Bull. v.64 no.2 Development of SiC-Whisker-Reinforced Ceramics G.C. Wei;P.F. Becher
  2. Am. Ceram. Soc. Bull. v.65 no.2 Hot-Pressed SiC Whisker/Si₃N₄ Matrix Composites P.D. Shalek;J.J. Petrovic;G.F. Hurley;F.D. Gac
  3. Am. Ceram. Soc. Bull. v.66 no.2 SiC-Whisker-Reinforced Si₃N₄ Composites R. Lundberg;L. Kahlman;R. Pompe;R. Carlsson;R. Warren
  4. Ceram. Ind. no.4 ART: Reinforcing Tomorrow Technology P.A. Janeway
  5. Ceram. Eng. Sci. Proc. v.12 no.9;10 The Economics of Silicon Carbide Whisker Fabrication J.M. Schoenung
  6. Am. Ceram. Soc. Bull. v.54 no.2 Formation of Silicon Carbide from Rice Hulls J.G. Lee;I.B. Cutler
  7. J. Mat. Res. v.7 no.1 Synthesis and Characterization of SiC Whiskers L. Wang;H. Wada;L.F. Allard
  8. J. Am. Ceram. Soc. v.79 no.7 Stacking Faults in β-SiC Formed During Carbothermal Reduction of SiO₂ W-S. Seo;K. Koumoto
  9. J. Am. Ceram. Soc. v.71 no.3 Microstructure and Growth Model for Rice-Hull-Derived SiC Whiskers S.R. Nutt
  10. J. Am. Ceram. Soc. v.80 no.5 Structure Analysis of Inclusions in β-Silicon Carbide Whiskers Grown from Rice Hulls K.M. Knowels;M.V. Ravichandran
  11. J. Mat. Sci. v.20 Growth of Beta-Silicon Carbide Whiskers by the VLS Process J.V. Milevski;F.D. Gag;J.J. Petrovic;S.R. Skaggs
  12. J. Am. Ceram. Soc. v.75 no.5 Microstructure of Silicon Carbide Whiskers Synthesized by Carbothermal Reduction of Silicon Nitride H. Wang;Y. Berta;G.S. Fischman
  13. J. Am. Ceram. Soc. v.70 no.11 Growth of Twinned β-Silicon Carbide Whiskers by the Vapor-Liquid-Solid Process R.D. Jong;R.A. McCauley
  14. J. Mat. Sci. v.30 Continuous Synthesis of Silicon Carbide Whiskers H.J. Choi;J.G. Lee
  15. J. Mat. Sci. v.29 Microstructural Features of Sintered Si₃N₄/SiC-Whiskers Composites: Mechanical Integrity Whiskers M.E. Brito;Y. Bando;M. Mitomo;S. Saito
  16. J. Am. Ceram. Soc. v.74 no.4 Effect of Vapor-Liquid-Solid and Vapor-Solid Silicon Carbide Whiskers on the Effective Thermal Diffusivity/Conductivity of Silicon Nitride Matrix Composites L.M. Russel;K.Y. Donaldson;D.P.H. Hasselman;N.D. Corin;J.J. Petrovic;J.F. Rhodes
  17. J. Am. Ceram. Soc. v.79 no.3 Thermal Conductivity of Vapor-Liquid-Solid and Vapor-Solid Silicon Carbide Whisker-Reinforced Lithium Aluminosilicate Glass-Ceramic Composites D.P.H. Hasselman;K.Y. Donaldson;J.R. Thomas.JR.;J.J. Brennan
  18. J. Am. Ceram. Soc. v.81 no.5 Effect of Boron, Carbon, and Iron Content on the Stacking Fault Formation during Synthesis of β-SiC Particles in the System SiO₂-CH₂ W-S. Seo;K. Koumoto
  19. J. Kor. Ceram. Soc. v.35 no.12 Synthesis of Silicon Carbide Whiskers (Ⅰ): Reaction Mechanism and Rate-Controlling Reaction H.J. Choi;J.G. Lee
  20. Synthesis Mechanism of Silicon Carbide Whiskers H.J. Choi
  21. J. Ceram. Soc. Jpn. v.96 no.10 Quantitative Analysis of Stacking Faults in the Structure of SiC by X-ray Powder Profile Refinement Method H. Takayama;N. Sutoh;N. Murakawa
  22. J. Phys. v.21 Inter-layer Interactions and the Origin of SiC Polytypes C. Cheng;R.J. Needs;V. Heine