Selectivity and Characteristics of $\beta$-SiC Thin Film Deposited on the Masked Substrate

기판-Mask 재료에 따른 $\beta$-SiC 박막 증착의 선택성과 특성 평가

  • 양원재 (한양대학교 세라믹공학과) ;
  • 김성진 (삼성종합기술원) ;
  • 정용선 (한양대학교 세라믹공정연구센터) ;
  • 최덕균 (한양대학교 세라믹공정연구센터) ;
  • 전형탁 (한양대학교 세라믹공정연구센터) ;
  • 오근호 (한양대학교 세라믹공정연구센터)
  • Published : 1999.01.01

Abstract

${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

Keywords

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