Abstract
The recent important issue in solar cell fabrication is to adopt thin film silicon solar cells on cheap substrates. However, thin cells demand new grid design concept that all the contacts(to the emitter and base) be located on the front surface. Hence, the aim of the investigation presented in this paper was to determine the potential and the basic limitation of the design. With this concept, an interdigitated front grid structure was realized and cells were fabricated through a set of photolithography processes. Confirmed efficiencies of up to 11.5% were achieved on bonded SOI wafers with a cell thickness of 50$\mu\textrm{m}$ in the case of finger spacing more than $\mu\textrm{m}$ and a base width of 35$\mu\textrm{m}$. It was also shown from the results that the design rules for optimizing the base fraction and reducing the shadowing fraction are noted as an important technique to realize high-efficiency thin silicon solar cells.
본 연구에서는 SOI 구조를 이용한 50$\mu\textrm{m}$ 두계의 규소 태양전지의 이용 가능성과 제한사항을 제시하기 위하여, interdigitated contact을 이용한 전극을 형성하도록 전지를 설계한 후 단계별 사진공정을 통해 태양전지를 제조하였다. Bonded SOI wafer를 이용하여 제조된 50$\mu\textrm{m}$ 두께의 결정질 규소 태양전지의 효율은 전극간격이 1100$\mu\textrm{m}$과 base width가 35$\mu\textrm{m}$인 경우에서 11.5%로 가장 높은 값을 나타내었다. 또한 실험결과로부터 전면전극을 이용한 태양전지의 구조는 power loss를 최소화하는 최적의 base fraction을 적용하는 것이 필요하며, 전지의 효율은 fill factor에 강한 의존성을 나타내기 때문에 fill factor loss를 최소화하는 설계조건이 필요함을 알 수 있었다.