Relative Absorption Edges of GaN/InGaN/GaN Single Quantum Wells and InGaN/GaN Heterostructures by Metalorganic Chemical Vapor Deposition

유기금속화학기상증착법으로 성장된 GaN/InGaN/GaN 단양자 우물층과 InGaN/GaN 이종접합 구조의 광학적 특징

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.