Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Fabrication and Electric Properties of $\textrm{LiNbO}_3$ Thin Film by an Rf-magnetron Sputtering Technique Li-Nb-K-O Ceramic Target

Rf-magnetron sputtering 방법으로 Li-Nb-K-O 세라믹 타겟을 사용하여 제작한 $\textrm{LiNbO}_3$박막의 제작 및 전기적 특성

  • Park, Seong-Geun (Dept.of Electronics Engineering, Kyungpook National University) ;
  • Baek, Min-Su (Dept.of Electronics Engineering, Kyungpook National University) ;
  • Bae, Seung-Chun (Dept.of Electronics Engineering, Kyungpook National University) ;
  • Gwon, Seong-Yeol (Dept.of Sensor Engineering, Kyungpook National University) ;
  • Kim, Gwang-Tae (Dept. of Materials Science Eng., Kyung-pook National University) ;
  • Kim, Gi-Wan (Dept.of Electronics Engineering, Kyungpook National University)
  • 박성근 (경북대학교 전자공학과) ;
  • 백민수 (경북대학교 전자공학과) ;
  • 배승춘 (경북대학교 전자공학과) ;
  • 권성열 (경북대학교 센서공학과) ;
  • 김광태 (경북대학교 재료공학과) ;
  • 김기완 (경북대학교 전자공학과)
  • Published : 1999.02.01
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Abstract

LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.

Keywords

References

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