Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization of Pt Bottom Electrode Deposited on Sputtered-Ru/polysilicon by Metalorganic Chemical Vapor Deposition

유기금속 화학증착법에 의해 Sputtered-Ru/Polysilicon 위에 증착된 Pt 전극의 특성

  • Choe, Eun-Seok (Dept. of Materials Engineering, Chungnam National University) ;
  • Yang, Jeong-Hwan (Dept. of Materials Engineering, Chungnam National University) ;
  • Yun, Sun-Gil (Dept. of Materials Engineering, Chungnam National University)
  • Published : 1999.04.01
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Abstract

The suggested electrode structure of MOCVD-Pt/sputtered-Ru/polysilicon has an excellent adhesion with increasing annealing temperatures and shows a stable electrode structure up to $600^{\circ}C$. However, the ruthenium used for barrier layer increased the roughness of platinum bottom electrodes because ruthenium diffused through the Pt bottom electrode and reacted with oxygen during the annealing above $700^{\circ}C$. The surface roughness increased the resistivity of Pt bottom electrodes. The resistivity of samples annealed at $600^{\circ}C$ was about $13\mu$Ω.cm. The electrode structure was possible to apply for ferroelectric thin film integration of semiconductor memory devices.

Keywords

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