Characteristics of Copper Thin Films and Patter Filling by Electrochemical Deposition(ECD)

전기화학증착법에 의한 구리박막과 패턴충전 특성

  • 김용안 (한양대학교 미세구조 반도체공학과) ;
  • 양성훈 (한양대학교 금속공학과) ;
  • 이석형 (한양대학교 금속공학과) ;
  • 이경우 (한양대학교 금속공학과) ;
  • 박종완 (한양대학교 금속공학과)
  • Published : 1999.06.01

Abstract

The characteristics of copper thin films and pattern filling capability were investigated by ECD. Prior to deposition of copper film, seed-Cu/Ta(TaN)/$SIO_2$(BPSG)/Si structure was manufactured. Copper deposition was performed with various current waveforms(DC/PC, 1~10,000Hz) and current densities(10~60 mA/$\textrm{cm}^2$) after pretreatment (Oxident removal, wetting) of seed-layer. Conformal pattern filling was performed using PC method with fast deposition rate of 6,000~8,000$\AA$/min. Heat-treated($450^{\circ}C$, 30min) copper films showed good resistivities of 1.8~2.1$\mu$$\Omega$.cm. According to the XRD analysis, (111)-preferred orientation of copper film was found in ECD-Cu/seed-Cu/Ta/$Sio_2$/Si structure. Also, we have successfully achieved to fill via holes with 0.35$\mu\textrm{m}$ width and 4:1 aspect ratio.

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