A Study on the photoreflectance chracterization of $Al_0.3Ga_0.7As$/GaAs multi-quantum well infrared photodetector structures

$Al_0.3Ga_0.7As$/GaAs 다중 양자우물 적외선 광검출기 구조의 Photoreflectance 연구

We used the photoreflectance spectroscopy for characterization of the infrared photodetector structure we GaAs/$Al_{0.3}Ga_{0.7}As$ multi-quantum well (MQW) structures grown by molecular beam epitaxy (MBE) method. Energy gap related transitions in GaAS and AlGaAs were observed. The Al composition(x) was determined b Sek's composition formula. MQW related transition energies were identify the transitions, the experimentally observed energies were compare with results of the envelope function approximation for a rectangular quantum well.