Journal of the Korean Society for Precision Engineering (한국정밀공학회지)
- Volume 16 Issue 3 Serial No. 96
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- Pages.78-83
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- 1999
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- 1225-9071(pISSN)
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- 2287-8769(eISSN)
The Behavior of Intrinsic Bubbles in Silicon Wafer Direct Bonding
실리콘 웨이퍼 직접접합에서 내인성 Bubble의 거동에 관한 연구
Abstract
The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of
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