Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 10 Issue 2
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- Pages.128-133
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- 2000
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
Two-dimensional continuum modelling of an inductively coupled plasma reactor
- Kim, Dong-Ho (Department of Chemical Engineering, KAIST) ;
- Shung, Won-Young (Semiconductor R&D Division, Samsung Electronics Co., Ltd) ;
- Kim, Do-Hyun (Department of Chemical Engineering, KAIST)
- Published : 2000.04.01
Abstract
Numerical analysis of the transport phenomena in an inductively coupled plasma reactor was conducted with two-dimensional axisymmetric model including the electromagnetic field model, electron and species density models. The spatial distribution of the charged species in the ion flux to the wafer have been calculated to examine the influence of the process conditions including antenna and reactor geometry. The antenna radius had a significant influence on the plasma state and axial ion flux distribution.
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