Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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AFM Studies on the Surface Morphology of Sb-doped $SnO_2$ Thin Films Deposited by PECVD

AFM을 이용한 PECVD에 의해 증착된 Sb-doped $SnO_2$ 박막의 표면형상에 관한 연구

  • Yun, Seok-Yeong (Dept. of Inorganic Materials Engineering, Pusan National University) ;
  • Kim, Geun-Su (Process Engineering Dept. 4, Hyundai Electronics Industries Co., Ltd.) ;
  • Lee, Won-Jae (Advanced elastical materials group, KERI) ;
  • Kim, Gwang-Ho (Dept. of Inorganic Materials Engineering, Pusan National University)
  • 윤석영 (부산대학교 공과대학 무기재료공학과) ;
  • 김근수 (현대전자산업주식회사 공정기술팀) ;
  • 이원재 (한국전기연구소 신소재응용연구그룹) ;
  • 김광호 (부산대학교 공과대학 무기재료공학과)
  • Published : 2000.08.01
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Abstract

Sb-doped tin oxide films were deposited on Cornig glass 1737 substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The films deposited at different reaction parameters were then examined by using XRD and AFM. The relatively good crystalline thin film was formed at $450^{\circ}C$, input gas ratio R[$P_{SbCl}P_{{SnCl}_4}$]=1.12 and r.f. power 30W. The surface roughness of the film formed by PECVD compared to TCVD was more smooth. Higher concentration of Sb dopant, lower deposition temperature, and thinner thickness of deposited film led to de-creasing surface roughness of the formed thin films.

플라즈마 화학증착법을 이용하여 Corning glass 1737 기판에 안티몬 도핑 산화주석 박막을 증착하였다. 플라즈만 화학증착시 반응변수에 따른 박막의 결정상 및 형성된 표면거칠기에 대하여 XRD와 AFM을 이용하여 검토하였다. 반응온도 $450^{\circ}C$, 유입가스비 R[$P_{SbCl}P_{{SnCl}_4}$]=1.12, r.f. power 30W에서 비교적 결정성이 뛰어난 박막을 얻을 수 있었다. 화학증착법(TCVD)에 비해 플라즈마 열화학증착법(PECVD)으로 얻은 박막의 표현형상이 보다 균일하였다. 안티몬 도핑농도가 증가할수록, 증착온고가 낮을수록, 증착두께가 작을수록 박막의 표면거칠기가 보다 감소하였다.

Keywords

References

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