Deposition process of Multi-layered Al-%Cu/Tungsten Nitride Thin Film

Magnetron sputtering 법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막

  • Lee, Gi-Seon (Division of Advanced Materials Engineering, Kongju National University) ;
  • Kim, Jang-Hyeon (Division of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Seo, Su-Jeong (Division of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, Nam-Cheol (Division of Advanced Materials Engineering, Kongju National University)
  • 이기선 (공주대학교 공과대학 신소재공학부) ;
  • 김장현 (성균관대학교 공과대학 금속재료공학부) ;
  • 서수정 (성균관대학교 공과대학 금속재료공학부) ;
  • 김남철 (공주대학교 공과대학 신소재공학부)
  • Published : 2000.09.01

Abstract

As a power durable-electrode in SAW filter, Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphous phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio, R= $N_2$/($N_2$+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as $3.6{\mu}{\Omega}-cm$, which was due to grain growth reduced crystal defects.

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

Keywords

References

  1. IEEE Trans. Ultrason. Ferroelectri. Freq. Control. v.40 C.C. W.Ruppel;A. Fiseberauer (et. al)
  2. Electron. Lett v.28 M. Hikita;Y. Tabuchi;N. Shibakaki;T. Takaki
  3. Thin Solid Film v.64 J.L Latham;W.R.Shreve(et. al)
  4. IECE Trans. J67-C Y. Ebata;S. Morishita
  5. Jpn. Appl. Phys. v.34 T. Kawakastsu;T. Okada;H. leki;Y.Satoh
  6. J. Appl. Phys. v.77 A. Kamijo;T. Mistuzuka
  7. Proc. Int. Symp. SAW Devices for mobil Communication, in Sendai J. Yamada;A. Yuhara
  8. Jpn. J. Appl. Phys. v.37 Noritoshi KIMURA;Mashahiro NAKANO;Katsuo SATO
  9. Jpn. J. Appl. Phys. v.34 T. Nishihara;H. Uchishiba;O. lkata;Y. Satoh
  10. Korean J. Materials Research v.10 no.1 K.S. Lee
  11. Appl. Phys. Lett. v.64 no.5 C.W. Lee;Y.T. Kim;J.Y. Lee
  12. Jpn. J. Appl. Phys. v.36 N. Kimura;M. Nakano;M. Nakazawa;K. Sato