Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization of ${Al_x}{Ga_{1-x}N}$ Thin Film Grown by MOCVD

MOCVD 법으로 성장시킨 ${Al_x}{Ga_{1-x}N}$ 박막의 특성분석

  • Kim, Seong-Ik (Department of Metallurgical Engineering, Kyunpook National University) ;
  • Kim, Seok-Bong (Department of Metallurgical Engineering, Kyunpook National University) ;
  • Park, Su-Yeong (Department of Metallurgical Engineering, Kyunpook National University) ;
  • Lee, Seok-Heon (School of Electronic and Electrical Engineering Kyungpook National University) ;
  • Lee, Jeong-Hui (School of Electronic and Electrical Engineering Kyungpook National University) ;
  • Heo, Jung-Su (Department of Metallurgical Engineering, Kyunpook National University)
  • 김성익 (경북대학교 금속공학과) ;
  • 김석봉 (경북대학교 금속공학과) ;
  • 박수영 (경북대학교 금속공학과) ;
  • 이석헌 (경북대학교 전자공학부) ;
  • 이정희 (경북대학교 전자공학부) ;
  • 허중수 (경북대학교 금속공학과)
  • Published : 2000.10.01
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Abstract

$Al_xGa_{1-x}N$ thin layers are promising materials for optical devices in the UV regions. $Al_xGa_{1-x}N$ thin layers w were grown on sapphire substrates by metalorgaruc chemical vapor deposition (MOCVD). The molar Al fraction and crystallinity of layers were deduced from synchrotron x-ray scattering experiment. Surface morphology were investigated using SEM and SPM. $Al_xGa_{1-x}N$ layers crystallinity were related with undoped GaN crystallinity. The Al mole fraction of $Al_xGa_{1-x}N$ layers affect the surface morphology of $Al_xGa_{1-x}N$ layers. The surface morphology was rough­e ened and the cracks were obse$\pi$ed by increasing the Al mole fractions.

자외선 검출소자로 응용될 수 있는 우수한 특성을 지진 $Al_xGa_{1-x}N$ 박막을 MOCVD 법으로 성장시킨 후 박막의 구조적인 특성을 조사하였다. 사파이어 기판 위에 성장된 $Al_xGa_{1-x}N$의 물리적인 특성을 평가하기 위해 Synchrotron Radiation XRD를 사용하였다. $Al_xGa_{1-x}N$의 두께가 커질수록 박막의 결정성은 증가하였으며 아래층은 Undoped GaN의 결정성과 성장된 $Al_xGa_{1-x}N$의 결정성이 서로 비례적인 상관관계를 가지고 있음을 알아내었다. Al 조성비는 막질에 크게 영향을 주었으며 조성비가 높아질수록 표면 형상은 매우 나빠졌다.

Keywords

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