Studies on the properties of electrochromic films and the effect of migration barrier

Electrochromic 막의 특성과 물질이동 방지막의 효과에 대한 연구

  • Published : 2000.09.01

Abstract

After manufacturing the electrochromic device (structure: ITO glass/$WO_3$/electrolyte/$V_2O_5$/ITO;glass) by using of sol-gel process and evaporation, optical properties and migration effect were investigated. The result shows that electrochromic device with heat treated (at water vapor ambient, $500^{\circ}C$, 1 hour) sol-gel coated $WO_3$ and $V_2O_5$ films had the highest transmittance variance. Electrochromic devices are based on the reversible insertion of guest atoms into structure of the host solid. But after cyclic operation, we find that the tungsten in $WO_3$ film and the indium in ITO film were migrated with each other. For the purpose of blocking migration, tungsten barrier film is inserted between ITO and $WO_3$ film. The result of cyclic voltamogram and the Auger depth profile show that the peak separation of cyclic voltamogram is reduced to below 1/10 and we could effectively block the indium and tungsten migration that is caused by flow of Li ions.

졸겔법 및 진공증착법으로 $WO_3$$V_2O_5$ 박막을 제조하고, 리튬이온을 이용하여 전기변색 소자를 제작한 후 광학적 특성을 조사하였다. 측정결과 졸겔법으로 제조된 $WO_3$ 박막과 $V_2O_5$ 박막을 수증기 분위기에서 $500^{\circ}C$로 1시간 열처리한 경우 가장 우수한 투과율 변화량을 나타내었다. 정.역방향 동작을 거듭할수록 $WO_3$막의 텅스텐과 ITO막의 인듐이 상호 확산하는 것을 관찰할 수 있었으며 이를 방지하기 위해 수백 $\AA$의 텅스텐 박막을 ITO와 $WO_3$막 사이에 삽입한 결과, cyclic voltamogram의 peak의 감소량이 1/10 이하로 감소하였으며, 리튬이온의 흐름에 의한 인듐과 텅스텐의 이동을 효과적으로 방지할 수 있었다.

Keywords

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