Characterizations of Ti-Al-V-N Films Deposited by DC and RF Reactive Magnetron Sputtering

직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti-Al-V-N 박막의 특성

  • Sohn, Yong-Un (Minerals & Materials Division, Korea Institute of Geology, Mining & Materials (KIGAM)) ;
  • Chung, In-Wha (Minerals & Materials Division, Korea Institute of Geology, Mining & Materials (KIGAM)) ;
  • Lee, Young-Ki (Department of Semiconductor Engineering, Ui-Duk University)
  • 손용운 (한국자원연구소 자원활용소재연구부) ;
  • 정인화 (한국자원연구소 자원활용소재연구부) ;
  • 이영기 (위덕대학교 반도체공학과)
  • Received : 2000.09.28
  • Published : 2000.11.30

Abstract

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

Keywords