Journal of the Korean Applied Science and Technology (한국응용과학기술학회지)

The Korean Society of Applied Science and Technology (한국응용과학기술학회)
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Deposition and Electrical Properties of (N-docosyl quinoliniurm)-TCNQ(1:2) Charge Transfer Complex Langmuir-Blodgett Films

(N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 누적 및 전기적 특성

  • Jeong, Soon-Wook (School of Advanced Materials & Systems Engineering, Kum Oh National university of Technology) ;
  • Jeong, Hwae-Gul (School of Advanced Materials & Systems Engineering, Kum Oh National university of Technology)
  • 정순욱 (금오공과대학교 신소재시스템공학부) ;
  • 정회걸 (금오공과대학교 신소재시스템공학부)
  • Published : 2000.03.31
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Abstract

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

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