Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Selective dry etching of III-nitrides in inductively coupled plasmas

  • Hyun CHo (Department of Materials Engineering Miryang National University) ;
  • Jin Kon Kim (Department of Materials Engineering Miryang National University) ;
  • Stephen J. Pearton (Department of Materials Science and Engineering University of Florida)
  • Published : 2001.06.01
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Abstract

A parametric cmpariosn of etch rate and etch selectivity has been performed for GaN, InN and AIN etched in chlorine- and boron halides-based Inductively Coupled Plasma (ICP) discharges. Chlorine-based chemistries produced controllable etch rates (50~150 nm/min) and maximum etch selectivities ~6 for InN over GaN and ~10 for InN over AlN. Maximum etch selectivities of ~100 for InN over GaN and InN over AlN were obtained in boron halides-based discharges and smooth etched surface morphologies were also achieved.

Keywords

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