Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Growth rate and growth steps of 6H-SiC single crystals in the sublimation process

  • Kang, Seung-Min (Department of Materials Science and Engineering, Institute of Advanced Materials,) ;
  • Lim, Chang-Sung (Department of Materials Science and Engineering, Institute of Advanced Materials, Hanseo Univ.) ;
  • Auh, Keun-Ho (Department of Ceramic Engineering, CPRC, Hanyang University)
  • Published : 2001.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

6H-SiC bulk crystals were grown by sublimation method with different conditions in term of gaseous pressures ad source temperatures. In order to optimize the growth rate, pressure at growth period and source and substrate temperatures were investigated as experimental variables. the results were compared with each other and finally the optimum growth conditions were discussed. Furthermore the relation of the growth steps and defects formation was evaluates in the point of reducing the micropipes. Subsequently the growth steps and defects formation was evaluated in the point of reducing the micropipes. Subsequently the growth steps were observed leading to the lower step height with the lower growth rate.

Keywords