Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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X-ray diffraction analysis on sapphire wafers with surface treatments in chemical-mechanical polishing process

사파이어 웨이퍼 연마공정에서의 표면처리효과에 대한 X-선 회절분석

  • 김근주 (울산과학대학 반도체응용과) ;
  • 고재천 (한국화학연구소 화학공정연구센터)
  • Published : 2001.10.01
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Abstract

The chemical-mechanical polishing process was carried out for 2"-dia. sapphire wafer grown by horizontalBridgman method on the urethane lapping pad with the silica sol. The polished wafer shows the full-width at halfmaximum of 200~400 arcsec in double-crystal X-ray diffraction, indicating that the slicing, grinding and lapping processes before the polishing process affected the crystalline structural property of the wafer surface by the mechanical residual stress. For the inclusion of surface treatments after chemical-mechanical polishing such as the thermal annealing at the temperature of $1,200^{\circ}C$for 4 hrs. and chemical etching, the crystalline quality was sigdicantly enhanced with the reduced full-width at half maximum up to 8.3 arcsec.arcsec.

수평 Bridgman 방법으로 성장한 사파이어 인고트를 절단 연마한 후, 사파이어 결정기판의 표면을 우레탄 천 위에서 실리카 졸을 사용하여 폴리싱하였다. 표면의 결정성을 X-선 회절을 통하여 조사하였으며, 2중 결정회절에 의한 반치폭은 200~400 arcsec을 가지며, 결정 인고트의 절편화 또는 양면 연삭 연마에 따른 잔류응력에 의한 표면에서의 기계적인 스트레스에 의해 결정성이 손상되어진다. 화학-기계적인 폴리싱공정을 수행한 수에 표면처리로 $1,200^{\circ}C$로 4시간 열처리 및 산처리를 연속적으로 수행할 경우 결정성이 반치폭 8.3 arcsec까지 줄어들어 향상됨을 확인하였다.

Keywords

References

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