Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Diamond Film Growth by Vapor Activation Method Using ${CH_3}OH/{H_2}O$ Gas

HFCVD법에 의한 ${CH_3}OH/{H_2}O$ 혼합기체의 다이아몬드 박막성장에 관한 연구

  • Published : 2001.12.01
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Abstract

The diamond thin film was deposited on Si(100) substrate from$CH_3OH/H_2O$mixtured gas using a hot filament chemical vapor deposition(HFCVD) method. The deposition condition for samples has been varried with the$CH_3OH/H_2O$composition. Scanning electron microscopy(SEM) and Raman spectroscopy has been employed for the sample analysis. The diamond sample has been obtained below 20Pa with$CH_3OH/H_2O$mixtured gas. The crystallinity of diamond film improved as the composition $CH_3OH$decreases from 60Vol% to 52Vol%, and the sample structure changed from the cauliflower to the diamond structure. But the sample structure was becomes cauliflower at 50Vol% of in$CH_3OH$ in the $CH_3OH/H_2O$. It was shown that the$CH_3OH$ has threshold composition.

Keywords

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