한국재료학회지 (Korean Journal of Materials Research)

  • 제11권3호
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  • Pages.221-226
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  • 2001
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지

사파이어($\alpha$-$Al_2$$O_3$) 단결정에 있어 basal slip (0001)1/3<1120>전위 Part I : 전위속도

Basal slip (0001)1/3 <1120> dislocation in sapphire ($\alpha$-$Al_2$$O_3$) single crystals Part I: Dislocation velocity

  • 윤석영 (부산대학교 생산기술연구소) ;
  • 이종영 (부산대학교 생산기술연구소)
  • Yoon, Seog-Young (Special researcher, research Institute of Industrial Technology, Pusan National University) ;
  • Lee, Jong-Young (Special researcher, research Institute of Industrial Technology, Pusan National University)
  • 발행 : 2001.03.01
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초록

사파이어 ($\alpha$-$Al_2$$O_3$) 단결정에 있어 basal slip (0001)1/3<1120>의 전위속도를 4점 곡강도를 이용하여, 측정하였다. 이 곡강도는 온도 $1200^{\circ}C$ 에서 $1400^{\circ}C$ 그리고 응력은 90MPa, 120MPa, 160MPa에서 행하여졌다. 전위속도는 4 점굽힘 시편의 굽힘변위속도에 의해 구하여졌다. 얻어진 전위속도를 이용하여 전위속도의 온도 및 응력 의존성에 대해 검토하였다. 전위속도의 온도의존성을 이용하여 basal slip 전위속도를 위한 활성화에너지를 구하였으며, 그 값은 대략 2.2$\pm$0.4eV이었다. 한편, 전위속도의 응력의존성을 나타내는 응력지수 m은 2.0$\pm$0.2이었다.

The basal slip (0001)1/3<1120 > dislocation velocity in sapphire ($\alpha$-$Al_2$$O_3$) single crystals was measured by four-point bending test. The bending experiment was carried out in the temperature range from 120$0^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. The velocity of such dislocations was estimated from the bending displacement rate of the four-point bend sample. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be about 2.2$\pm$0.4eV. In addition, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 2.0$\pm$0.2.

키워드

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