Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Properties of NiO-doped WO$_3$

NiO 첨가에 따른 WO$_3$의 물성

  • Published : 2001.04.01
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Abstract

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical Property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$ but the grain sixte of 0.1, 1, 10 mol% NiO-doped$ WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

WO$_3$에 NiO를 첨가하여 제조한 후막형 시편의 미세구조와 전기적 성질에 대해 연구하였다. NiO 첨가에 따른 WO$_3$의 결정립 성장이 억제되었고, 입도 분포도 균일하였으나 첨가량에 따른 결정립 크기 변화정도는 작았다. 산소 분압 감소로 WO$_3$의 전도성은 증가하였고, NiO 첨가에 의해 고용한계 이하에서는 전도성이 증가하였고, 이상에서는 전도성이 감소하였다. 온도 증가에 따라 외인성 (extrinsic) 구간에서는 전도성 변화가 적었고, 고온의 진성 (intrinsic) 구간에서는 전도도가 급격히 증가하였으며, 이들의 중간 온도에서는 산소흡착에 따라 전도도가 감소하였다.

Keywords

References

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