Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지

Effect of Ammonia on Alignment of Carbon Nanotubes in Thermal Chemical Vapor Deposition

촉매 금속을 이용한 열화학 기상 증착법에서 탄소 나노튜브의 수직배향 합성에 대한 암모니아의 역할

  • Hong, Sang-Yeong (Dept. of Materials Engineering, Chungnam National University) ;
  • Jo, Yu-Seok (Dept. of Materials Engineering, Chungnam National University) ;
  • Choe, Gyu-Seok (Dept. of Materials Engineering, Chungnam National University) ;
  • Kim, Do-Jin (Dept. of Materials Engineering, Chungnam National University) ;
  • Kim, Hyo-Jin (Dept. of Materials Engineering, Chungnam National University)
  • Published : 2001.08.01
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Abstract

Effects of ammonia treatment on the morphologies of the catalytic metal films and carbon nanotubes subsequently synthesized via a thermal chemical vapor deposition method were investigated. An optimally controlled thermo-chemical process of ammonia treatment gave rise to a morphology of a dense distribution of vertically aligned carbon nanotubes. $NH_3$ treatment is a crucial key process to obtain vertically aligned carbon nanotubes. However, it was realized by a simple $NH_3$ treatment during synthesis at temperatures of $800-900^{\circ}C$ without any extra process. The structure and morphology of carbon nanotubes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy.

열화학 기상 증착법을 이용하여 암모니아 처리에 따른 촉매 금속의 표면형태와 탄소 나노튜브의 성장을 조사하였다. 암모니아 처리의 열화학 과정의 조절에 의해 고르게 분산된 수직 성장된 탄소 나노튜브를 얻었다. 탄소 나노튜브 합성시 암모니아처리는 수직성장 및 고밀도 성장에 중요한 과정으로 그 역할에 대해 알아보았다. 고밀도의 수직 배향된 탄소나노튜브의 구조와 형태는 주사전자 현미경과 투과전자 현미경, 라만을 이용하여 관찰하였다.

Keywords

References

  1. S. Iijima, Nature(London), 354, 56, (1991) https://doi.org/10.1038/354056a0
  2. eroen W.G. Wilder, Liesbeth C. Venema, Andrew G. Rinzler, Richard E. Smalley, Nature(London), 391(6662), 59 (1998) https://doi.org/10.1038/34139
  3. S. Iijima and T. Lchihashi, Nature 363 (6430), 603 (1993) https://doi.org/10.1038/363603a0
  4. T.W. Ebbesen, H.J. Lezec, H.F. Ghaemi, T,Thio, P.A. Wolff, Nature, 391 (6668), 667, (1998) https://doi.org/10.1038/35570
  5. ？A.C. Dillon, K.M. Jones, T.A. Bekedahl, C.H. Kang, D.S. Bethune and M.J. Heben, Nature(London), 386, 377, (1997) https://doi.org/10.1038/386377a0
  6. J. Lefebvre, M. Radosavljevi, and A. T. Johnson, Appl. Phys. Lett., 76, 3828, (2000) https://doi.org/10.1063/1.126795
  7. P.G. Collins, A. Zettl, H. Bando, A. Thess, and R.E. Smalley, Science, 278, 100, (1997) https://doi.org/10.1126/science.278.5335.100
  8. C. Journet, W.K. Maser, P. Bernier, A. Loiseau, M. Lamy de la Chapelle, S. Lefrant, P. Deniard, R. Lee, and J.E.Fisher, Nature(London), 388, 756, (1997) https://doi.org/10.1038/41972
  9. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y.H.Lee, S.G. Kim, A.G. Rinzier, D.T. Colbert, G.E. Scuseria, J. E. Fisher, and R.E. Smalley, Science, 273, 483, (1996) https://doi.org/10.1126/science.273.5274.483
  10. Z.F. Ren, Z.P. Huang, J.W. Xu, J.H. Wang, P. Bush, M.P. Siegal, and P.N. Provencio, Science, 282, 1105, (1998) https://doi.org/10.1126/science.282.5391.1105
  11. Chris Bower, Wei Zhu, Sungho Jin, and Otto Zhou, Appl. Phys. Lett., 77, 830, (2000) https://doi.org/10.1063/1.1306658
  12. C.J. Lee, D.W. Kim, T.J. Lee, Y. C. Choi, Y.S. Park, Y.H. Lee, W.B. Choi, N.S. Lee, G.S. Park, and J.M. Kim, Chem. Phys. Lett., 312, 461, (1999) https://doi.org/10.1016/S0009-2614(99)01074-X
  13. S. Fan, M.G. Chapline, N.R. Franklin, T.W. Tombler, A.M. Cassell, and H.Dai, Science, 283, 512, (1999) https://doi.org/10.1126/science.283.5401.512
  14. W.Z.Li, S.S.Xie, L.X. Qian, B.H. Chang, B.S. Zou, W.Y. Zhou, R.A.Zhao, and G. Wang, Science, 274, 1701, (1996) https://doi.org/10.1126/science.274.5293.1701
  15. M. Yudasaka, R. Kikuchi, T. Matsui, Y. Ohki, S. Yoshimura, and E. Ota, Appl. Phys. Lett., 67, 2477, (1995) https://doi.org/10.1063/1.114613
  16. X.H. Chen, S.Q. Feng, Y. Ding, J.C. Peng, and Z.Z, Chen, Thin Solid Films, 339, 6, (1999) https://doi.org/10.1016/S0040-6090(98)00809-8
  17. S.H. Tsai, C.W. Chao, C.L. Lee, and H.C. Shin, Appl. Phys. Lett., 74, 3462, (1999) https://doi.org/10.1063/1.124128