Journal of Magnetics

The Korean Magnetics Society (한국자기학회)
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Formation of $Al_O_3$Barrier in Magnetic Junctions on Different Substrates by $O_2$Plasma Etching

  • Wang, Zhen-Jun (School of Materials Science & Engineering, College of Engineering, Seoul National University) ;
  • Jeong, Won-Cheol (School of Materials Science & Engineering, College of Engineering, Seoul National University) ;
  • Yoon, Yeo-Geon (School of Materials Science & Engineering, College of Engineering, Seoul National University) ;
  • Jeong66, Chang-Wook (School of Materials Science & Engineering, College of Engineering, Seoul National University) ;
  • Joo, Seung-Ki (School of Materials Science & Engineering, College of Engineering, Seoul National University)
  • Published : 2001.09.01
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Abstract

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

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References

  1. Phys. Rev. Lett. v.74 no.16 J.S. Moodera;L.R. Kinder;T.M. Wong;R. Meservey
  2. J. Appl. Phys. v.85 no.8 S.S.P. Parkin;K.P. Roche;M.G. Samant;P.M. Rice;R.B. Beyers;R.E. Scheuerlein;E.J. O'Shllivan;S.L. Brown;J. Bucchigano;D.W. Abraham;Yu Lu;M. Rooks;P.L. Trouiloud;R.A. Wanner;W.J. Gallagher
  3. J. Magn. Magn. Mater. v.200 no.1-3 G. Prinz
  4. J. Appl. Phys. v.83 no.1 M. Tondra;J.M. Daughton;D. Wang;R.S. Beech;A. Fink;J.A. Taylor
  5. J. Magn. Magn. Mater. v.200 no.1-3 J.S. Moodera;G. Mathon
  6. J. Appl. Phys. v.42 J.H. Greiner
  7. J. Appl. Phys. v.50 no.11 P.C. Karulkar;J.E. Nordman
  8. Appl. Phys. Lett. v.73 no.5 J. Nassar;M. Hehn;A. Vaures;F. Petroff;A. Fert
  9. Appl. Phys. Lett. v.71 no.19 R.J.M. van de Veerdonk;J. Nowak;R. Meservey;J.S. Moodera;W.J.M. de Jonge
  10. Appl. Phys. Lett. v.70 no.22 J.S.Moodera;E.F. Gallagher;K. Robinson;J. Nowak
  11. Appl. Phys. Lett. v.74 no.3 J.J. Sun;V. Soares;P.P. Freitas
  12. J. Magn. Magn. Mater. v.156 no.1-3 K.I. Min;S.-K. Joo;K.H. Shin
  13. J. Appl. Phys. v.81 no.8 K.J. Kim;B.-I. Lee;S.K. Joo