Fabrication of the 7$\times$7 mm Planar Inductor for 1W DC-DC Converter

1W DC-DC 컨버터를 위한 7$\times$7 mm 평면 인덕터의 제조

  • Bae, Seok (Dept. of metallurgical and material Science, Hongik Univ.) ;
  • Ryu, Sung-Ryong (Dept. of metallurgical and material Science, Hongik Univ.) ;
  • Kim, Choong-Sik (Dept. of metallurgical and material Science, Hongik Univ.) ;
  • Nam, Seoung-Eui (Dept. of metallurgical and material Science, Hongik Univ.) ;
  • Kim, Hyoung-June (Dept. of metallurgical and material Science, Hongik Univ.) ;
  • Min, Bok-Ki (RLC devices Lab., Korea Electro-technology Research Institute) ;
  • Song, Jae-Sung (RLC devices Lab., Korea Electro-technology Research Institute)
  • 배석 (홍익대학교 금속재료공학과) ;
  • 류성룡 (홍익대학교 금속재료공학과) ;
  • 김충식 (홍익대학교 금속재료공학과) ;
  • 남승의 (홍익대학교 금속재료공학과) ;
  • 김형준 (홍익대학교 금속재료공학과) ;
  • 민복기 (한국전기연구소 RLC 소자연구실) ;
  • 송재성 (한국전기연구소 RLC 소자연구실)
  • Published : 2001.10.01

Abstract

The planar type inductors have a good potential for the application of miniaturized low power DC-DC converters. For those high quality application, the reduction of coil loss and also magnetic films which have good high frequency properties are required. Fabricated inductor was consisted of FeTaN/Ti magnetic film and electroplated Cu coil thickness of 100$\mu\textrm{m}$ and $SiO_2$ as a insulating layer. The inductor was designed double rectangular spiral shape for magnetic field highly confining within the device. The measured value of inductance and resistance were 980 nH and 1.7 $\Omega$ at 1 MHz as operating frequency of device. The Q factor is 3.55 at 1 MHz.

1W급의 DC-DC converter에 탑재하기 위해 FeTaN 연자성 자성박막을 이용한 박막형 인덕터를 제조하여 특성을 평가하였다. 자심부분은 2$\mu\textrm{m}$ 두게의 F $e_{78.81}$T $a_{8.47}$ $N_{12.71}$ 연자성 박막을 사용하였으며 코일부분은 100$\mu\textrm{m}$ 두게의 Cu를 사진공정과 전기도금공정을 이용하여 제조하였다. 제조된 박막 인덕터의 디자인은 상호인덕턴스를 효율적으로 증가시킬 수 있는 double rectangular spiral형태였으며 측정된 특성은 DC-DC converter의 작동주파수인 1 MHz에서 인덕턴스 980nH, 저항 1.7 $\Omega$Q 값은 3.55였다.다.

Keywords

References

  1. IEEE.Trans.Magn. v.MAG-15 R.F.Soohoo
  2. IEEE Trans.magn. v.MAG-20 K.Kawabe;H.Koyama;K.Shirae
  3. IEEE,Trans Magn v.MAG-23 O.Oshiro;H.Tsujimoto;K.Shirae
  4. IEEE Trans.Magn. v.27 M.Yamaguchi;M.Matsumoto;H.Ohzeki
  5. IEEE Trans.Magn. v.28 M.Yamaguchi;S.Arakawa;K.Arai
  6. J.Appl.Phys v.85 C.H.Lee;D.H.Shin;D.H.Ahn;S.E.Nam;H.J.Kim
  7. JAP v.85 no.8 Shin,D.H;Kim,C.S;Ahn,D.H;Nam,S.E;Kim,H.J
  8. IEEE Trans.Hybrids & Packaging v.10 H.M.Greenhouse