JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Current Status and Prospects of FET-type Ferroelectric Memories

  • Ishiwara, Hiroshi (Frontier Collaborative Research Center, Tokyo Institute of Technology)
  • Published : 2001.03.01
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Abstract

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

Keywords

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