대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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고전압과 고전력 응용을 위한 $Al_{0.3}Ga_0.7N/GaN$ 이종접합 전계효과 트랜지스터의 제작 및 특성에 관한 연구

Studies on Fabrication and Characteristics of $Al_{0.3}Ga_0.7N/GaN$ Heterojunction Field Effect Transistors for High-Voltage and High-Power Applications

  • 김종욱 (LG저자기술원 소자재료연구소 RF소자그룹) ;
  • 이재승 (LG저자기술원 소자재료연구소 RF소자그룹) ;
  • 김창석 (LG저자기술원 소자재료연구소 RF소자그룹) ;
  • 정두찬 (LG저자기술원 소자재료연구소 RF소자그룹) ;
  • 이재학 (LG저자기술원 소자재료연구소 RF소자그룹) ;
  • 신진호 (LG저자기술원 소자재료연구소 RF소자그룹)
  • Kim, Jong-Wook (RF Devices Group, Devices and Materials Laboratory, LG Electronics Institute of Technology) ;
  • Lee, Jae-Seung (RF Devices Group, Devices and Materials Laboratory, LG Electronics Institute of Technology) ;
  • Kim, Chang-Suk (RF Devices Group, Devices and Materials Laboratory, LG Electronics Institute of Technology) ;
  • Jeong, Doo-Chan (RF Devices Group, Devices and Materials Laboratory, LG Electronics Institute of Technology) ;
  • Lee, Jae-Hak (RF Devices Group, Devices and Materials Laboratory, LG Electronics Institute of Technology) ;
  • Shin, Jin-Ho (RF Devices Group, Devices and Materials Laboratory, LG Electronics Institute of Technology)
  • 발행 : 2001.08.01
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초록

분자선 결정 성장법을 이용하여 성장된 서로 다른 장벽층의 두께를 갖는 $Al_{0.3}Ga_{0.7}N$ heterojunction field effect transistors (HFETs) 를 제작하여 그 특성을 비교, 관찰하였다. $Al_{0.3}Ga_{0.7}N$층의 두께에 따른 특성의 비교로부터 최적의 2 차원 전자개스 (2 dimensional electron gas) 를 가질 수 있는 $Al_{0.3}Ga_{0.7}N$/GaN HFET 소자 구조를 얻을 수 있었다. $L_g=0.6$ ${\mu}m$ 와 $W_g=34\;{\mu}m$ $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET에서 Imax ($V_{gs}=1\;V$) 와 $G_{m,maX}$는 각각 1.155 A/mm 및 250ms/${\mu}m$ 이었으며 $F_t=13$ GHz 와 $F_{max}=48$ GHz의 우수한 고주파 특성을 얻을 수 있었고 2 inch 기판상에서 제작된 소자들은 5% 이하의 매우 균일한 DC 특성을 나타내었다. 이와 더불어 게이트-드레인 간의 간격에 따른 소자의 특성을 관찰함으로서 소자의 항복전압과 고주파 특성과의 상관관계를 고찰하였다.

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

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참고문헌

  1. B. Green, et al, 'The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs,' IEEE Electron Device Lett., vol. 21, no. 6, pp. 268-270, 2000 https://doi.org/10.1109/55.843146
  2. S. T. Sheppard, et al, 'High-Power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates,' IEEE Electron Device Lett., vol. 20, no. 4, pp. 161-163, 1999 https://doi.org/10.1109/55.753753
  3. Y. F. Wu, et al, 'GaN-based FETs for microwave power amplifications,' IEICE Trans. Electron., vol. E82-C, no. 11, pp. 1895-1905, 1999
  4. Y. F. Wu, et al, 'High Al-content AlGaN/GaN HEMTs on SiC substrate with very high power performance,' IEEE 1999 IEDM, Technical Digest, pp. 925-927, 1999 https://doi.org/10.1109/IEDM.1999.824300
  5. K. K. Chu, et al, 'AlGaN/GaN piezoelectric HEMT's with submicron gates on sapphire,' Electrochemical Society Proceedings, vol. 98-12, pp. 46-51, 1999
  6. O. Ambacher, et al, 'Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,' J. Appl. Phys., vol. 87, pp. 334-344, 2000 https://doi.org/10.1063/1.371866
  7. Z. Fan, et al, 'Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field effect transistors,' Appl. Phys. Lett., vol. 69-9, pp.1229-1231, 1996 https://doi.org/10.1063/1.117420
  8. Y. F. Wu, et al, 'Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors,' Appl. Phys. Lett., vol. 69-10, pp. 1438-1440, 1996 https://doi.org/10.1063/1.117607
  9. R. Gaska, et al, 'AlGaN/GaN heterojunction FETs with offset gate design,' Electron. Lett., vol. 33-14, pp. 1255-1257, 1997 https://doi.org/10.1049/el:19970818