RF CMOS 기술의 현재와 미래

  • Published : 2002.09.01

Abstract

Wireless communication systems will be one of the biggest drivers of semiconductor products over the next decade. Global Positioning System (GPS) and Blue-tooth, HomeRF, and Wireless-LNA system are just a few of RF-module candidate awaiting integration into next generation mobile phone. Motivated by the growing needs for low-cost and multi-band/multi-function single chip wireless transceivers, CMOS technology has been recognized as a most promising candidate for the implementation of the future wireless communication systems. This paper presents recent developments in RF CMOS technology, which is classified into device technology and circuit technology and from them forecasts technology trends in the near future.

Keywords

References

  1. Digest of IEEE Electron Device Meeting Future direction and technology requirements of wireless communications Yukou Mochida;Takeshi Tadano;Hirohisa Gambe
  2. High performance sun-40 nm CMOS devices on SOI for the 70 nm Technology Node S. Narashima(et al.)
  3. A record high 150㎓ fmax realized at 0.18mm gate length in a industrial RF-CMOS technology L.F. Tiemeijer;H.J.M. Boots;R.J. Havens;A.J. Scholtens;P.H.W. de Vreede;P.H. Woerlee;A. Heringa;D.B.M. Klaassen
  4. IEEE Electron Device Letters v.21 no.12 Gate Layout and Bonding Pad Structure of a RF n-MOSFET for Low Noise Performance Cheon Soo Kim;Jung-Woo Park;Hyun Kyu Yu;Hanjin Cho
  5. IEEE Jour. of Solid State Circuits v.34 no.3 GSM Transceiver Front-End Circuits in 0.25 ㎛ CMOS Q. Huang(et al.)
  6. IEEE 1999 Symposium on VLSI Circuits Future Perspective and Scaling Down Roadmap for RF CMOS E. Morifuji(et al.)
  7. ISSCC Dig. Tech. Papers A 18dBm IIP3 LNA in 0.35㎛ CMOS Youngwang Ding;Ramesh Harjani
  8. IEEE Microwave and Guided Wave Lett. v.9 no.6 An FET-Level linearization Method Using a Predistortion branch FET Min-Gun Kim;Chung-Hwan Kim;Hyun-Kyu Yu;Jaejin Lee
  9. Symposium on VLSI Circuits On-Chip Spiral Inductors with Patterned Ground Shield for Si-Based RF IC's C. Patric Yue;S. Simon Wong
  10. IEEE Trans. on Microwave Theory and Techniques v.48 no.1 Improvement of the Quality Factor of RF Integrated Inductors by Layout Optimization Jose M. Lopez-Villegas;Josep Samitier;Charles Cane;Peter Losantos;Joan Bausells
  11. IEEE Trans. on Electron Devices v.45 no.9 The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology Min Park;Seonghearn Lee;Cheon Soo Kim;Hyun Kyu Yu;Kee Soo Nam
  12. TSMC 2000 Technology Symposium
  13. Proceeding of ESSCIRC Class 1 Bluetooth Power Amplifier with 24dBm Output Power and 48% PAE at 2.4 ㎓ in 0.25㎛ CMOS Vickram R. Vathulya;Tirdad Sowlati;Domine Leenaerts
  14. IEEE International Microwave Symposium Digest Design Guide of Coupling Between Inductors and Its Effect on Reverse Isolation of a MOS LNA C. S. Kim;M. Park;C.-H. Kim;M.-Y. Park;S.-D. Kim;Y.-S. Youn;J.-W. Park;S.-H. Han;H. K. Yu;H. Cho
  15. IMS Digest H. M. Hsu(et al.)
  16. IEEE International Microwave Symposium Digest Deep Trench Guard Technology to Suppress Coupling between Inductors in Silicon FR IC's Cheon Soo Kim;Piljae Park;Joung-Woo Park;Nam Hwang;Hyun Kyu Yu
  17. IEEE Radio and Wireless Conference A RF MOSFET SPICE Model with a New Substrate Network Seonghearn Lee;Cheon Soo Kim;Hyun Kyu Yu
  18. Symposium on VLSI Circuits A 2dB NF, fully differential, variable gain, 900 ㎒ CMOS LNA E. Sacchi;I. Bietti;F. Gatta;F. Svelto;R. Castello
  19. IEEE J. Solid-State Circuits v.31 A 2.7V 900 ㎒ CMOS LNA and Mixer A. N. Karanicolas
  20. Proceedings of ISCAS v.3 Solutions for image rejection CMOS LNA F. Svelto;G. Montagna;S. Deantoni;G. Braschi;R. Castello
  21. Proceedings of ICECS'99 v.1 Analysis of Nonlinearities in RF CMOS Amplifiers Chien-Hsiung Feng(et al.)
  22. ISSCC Dig. Tech. Papers A 1.9 ㎓ wide-band 1F double conversion CMOS integrated receiver for cordless telephone applications J. C. Rudell;J. J. Ou;T. B. Cho;G. Chien;F. Brianti;J. A. Weldon;P. R. Gray
  23. IEEE J. Solid-State Circuits v.31 no.7 A 1 ㎓ CMOS RF Front-End IC for a Direct-Conversion Wireless Receiver A. Rofougaran;J. Y. C. Chang;M. Rofougaran;A. A. Abidi
  24. ETRI Internal Report ETRI Internal
  25. Analog Product Center Magazines Analog Devices, Inc.
  26. IEEE J. Solid-State Circuits v.35 A Packaged 1.1 ㎓ CMOS VCO with Phase Noise of - 126dBc/㎐ at a 600-㎑ Offset C.-M. Hung;Kenneth K. O
  27. ISSCC Dig. Tech. Papers A Low-Noise Transformer-Based 1.7 ㎓ CMOS VCO Matt Straayer;Jose Cabanillas;Gabriel M. Rebeiz
  28. ISSCC Dig. Tech. Papers A 1V 51 ㎓ Fully-Intergrated VCO in 0.12㎛ CMOS Marc Tiebout;Hans-Dieter Wohlmuth;Werner Simburger
  29. ISSCC Dig. Tech. Papers A 1.5W Class-F RF Power Amplifier in 0.2㎛ CMOS Technology Timothy C. Kuo;Bruce B. Lusignan
  30. ISSCC Dig. Tech. Papers A 2.4㎓ 0.18㎛ CMOS Self-Biased Cascode Power Amplifier with 23㏈m Output Power Tirdad Sowlati;Domine Leenaerts
  31. ISSCC Dig. Tech. Papers A 5㎓ CMOS Transceiver for IEEE 802.11a Wireless LAN David Su(et al.)
  32. ISSCC Dig. Tech. Papers A 1W 0.35㎛ CMOS Power Amplifier for GSM-1800 with 45% PAE Carsten Fallesen;Per Asbeck
  33. IEEE J. Solid-State Circuits v.30 Direct-conversion radio transceivers for digital communications A. A. Abidi