Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Characterization of Deep Dry Etching of Silicon Single Crystal by HDP

HDP를 이용한 실리콘 단결정 Deep Dry Etching에 관한 특성

  • 박우정 (성균관대학교 신소재공학과) ;
  • 김장현 (성균관대학교 신소재공학과) ;
  • 김용탁 (성균관대학교 신소재공학과) ;
  • 백형기 (성균관대학교 신소재공학과) ;
  • 서수정 (성균관대학교 신소재공학과) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2002.06.01
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Abstract

The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$\_$6/:C$_4$F$\_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.

현재 전기 . 전자 기술의 추세는 소형화를 비롯하여 집적화, 저전력화, 저가격화의 장점을 가진 MEMS(Micro Electro Mechanical Systems) device의 개발에 주력하고 있으며, 이를 위해서는 고종횡비와 높은 식각 속도를 가진 HDP(High Density Plasma) etching 기술 개발이 필수적이라 할 수 있다. 이를 위하여 우리는 Inductively Coupled Plasma(ICP) 장비를 이용하여 각 공정 변수에 의한 실리콘 deep trench식각 반응을 연구하였다. 실험 공정 변수인 platen power, etch/passivation cycle time에서 etching 단계 시간에 따른 변화와 SF$_{6}$:C$_4$F$_{8}$ 가스유량을 변화시켜 연구하였으며 또한 이들의 profile, scallops, 식각 속도, 균일도, 선택비도 관찰하였다.

Keywords

References

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