Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

A Novel Trench Electrode BRT with the Intrinsic Region for Superior Electrical Characteristics

고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터

  • Published : 2002.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

Keywords

References

  1. ISPSD'98 A base resistance controlled thyristor with the self-align corrugated p-base D. S. Byeon;B. H. Lee;M. K. Han;Y. I. Choi
  2. IEEE Electron Device Letter v.12 A new MOS-gated thyristor structure with turn-off achieved by controlling the base resistance M. Nandakumar;B. J. Baligar;M. S. Shekar;S. Tandon;A. Reismann https://doi.org/10.1109/55.79565
  3. IEEE.Trans. Electron Devices v.38 Characteristics of the emitter switched thyristor M. S. Shekar;B. J. Baligar;M. Nandakumar;S. Tandon;A. Reismann https://doi.org/10.1109/16.85158
  4. 대한전기학회 v.48 no.7 세그먼트 p-베이스를 이용한 수평형 이중 채널 EST 오재근;변대석;한민구;최연익
  5. Trans. on EEM v.2 no.1 Simulation of a novel lateral trench electrode IGBT with improved latch-up and forward blocking characteristics E. G. Kang;S. H. Moon;M. Y. Sung
  6. 전기전자재료학회 논문지 v.13 no.5 래치 업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT 강이구;성만영
  7. Trans.on EEM v.2 no.3 A novel EST with trench electrode to immunize snab-back effect and to obtain high blocking voltage E. G. Kang;M. Y. Sung