DOI QR코드

DOI QR Code

Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발

The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma

  • 조수범 (인하대학교 전자재료공학과) ;
  • 김진우 (인하대학교 전자재료공학과) ;
  • 정재성 (인하대학교 전자재료공학과) ;
  • 오범환 (인하대학교 전자재료공학과) ;
  • 박세근 (인하대학교 전자재료공학과) ;
  • 이종근 ((주) A.S.E.)
  • 발행 : 2002.03.01

초록

The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

키워드

참고문헌

  1. J. Electrochem. Soc v.139 no.9 Dry development of surface imaging resist: a major parameter for process optimization Maaike Op de Beeck;Mieke Goethals;Luc Van den hove https://doi.org/10.1149/1.2221278
  2. J. Vac. Sci. Technol. A v.14 no.3 Dry development of sub-0.25㎛ feature pattern with 193nm silylated resist S. C. Palmateer;A. R. Forte;R. R. Kunz;M. W. Horm https://doi.org/10.1116/1.580282
  3. 인하대학교 석사학위논문 Silylated resist의 MERIE 건식식각 특성에 관한 연구 김준모
  4. 전기전자재료학회논문지 v.11 no.9 유도결합형 플라즈마원을 이용한 고선택비 산화막 식각에 관한 연구 이수부;박헌건;이석현
  5. Surface and coating technology v.120 Improvement of ICP plasma with periodic control of axial magnetic field Beom-hoan O;Jae-seong Jong;Se-Geun Park https://doi.org/10.1016/S0257-8972(99)00370-9
  6. 한국진공학회논문집 v.9 no.3 자화플라즈마의 분산 특성과 유효광학계수 변화 라상호;박세근;오범환
  7. 한국전기 전자재료학회 2000하계학술대회 논문집 자화 플라즈마의 주기적 특성 변화와 E-ICP 라상호;박세근;오범환
  8. J. Electrochem. Soc. v.140 no.12 Low temperature etching of silylated resist in an oxygen plasma generated by an electron cyclotron resonance source K. T. Sung;W. H. Juan;S. W. Pang https://doi.org/10.1149/1.2221137
  9. 한국전기전자재료학회 2000하계학술대회 논문집 산화막 식각에 적용된 E-ICP 효과와 형상단면비교 조수범;송호영;박세근;오범환
  10. J. Vac. Sci. Technol. B v.10 no.5 Microscopic uniformity in plasma etchin Richard A Gottscho;C. W. Jurgensen;D. J. Vitkavage https://doi.org/10.1116/1.586180