Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Direct Bonded (Si/SiO2∥Si3N4/Si) SIO Wafer Pairs with Four-point Bending

사점굽힘시험법을 이용한 이종절연막 (Si/SiO2||Si3N4/Si) SOI 기판쌍의 접합강도 연구

  • 이상현 (서울시립대학교 재료공학과) ;
  • 송오성 (서울시립대학교 재료공학과)
  • Published : 2002.06.01
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Abstract

$2000{\AA}-SiO_2/Si(100)$ and $560{\AA}-Si_3N_4/Si(100)$ wafers, which are 10 cm in diameter, were directly bonded using a rapid thermal annealing method. We fixed the anneal time of 30 second and varied the anneal temperatures from 600 to $1200^{\circ}C$. The bond strength of bonded wafer pairs at given anneal temperature were evaluated by a razor blade crack opening method and a four-point bonding method, respectively. The results clearly slow that the four-point bending method is more suitable for evaluating the small bond strength of 80~430 mJ/$\m^2$ compared to the razor blade crack opening method, which shows no anneal temperature dependence in small bond strength.

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References

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