Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Optical and Structural Properties of GaN Grown on AlN/Si via Molecular Beam Epitaxy Using Ammonia

암모니아를 이용하여 분자선에피탁시 방법으로 AIN/Si 기판에 성장시킨 GaN의 구조적,광학적 특성

  • 김경현 (충남대학교 재료공학과, 자성재료연구센터) ;
  • 홍성의 (한국전자통신연구원 광저장소자팀) ;
  • 강석준 (충남대학교 재료공학과, 자성재료연구센터) ;
  • 이상현 (충남대학교 재료공학과, 자성재료연구센터) ;
  • 김창수 (한국표준연구원 재료평가센터) ;
  • 김도진 (충남대학교 재료공학과, 자성재료연구센터) ;
  • 한기평 (한국전자통신연구원 광저장소자팀) ;
  • 백문철 (한국전자통신연구원 광저장소자팀)
  • Published : 2002.05.01
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Abstract

A new approach of using double buffer layers of AlN and GaN for growth of GaN films on Si has been undertaken via molecular beam epitaxy using ammonia. The first buffers layer of AlN was grown using $N_2$plasma and the second of GaN was grown using ammonia. The surface roughness of the grown films was investigated by atomic force microscope and was compared with the normally grown films on sapphire. Double crystal x-ray rocking curve and low temperature photoluminescence techniques were employed for structural and optical properties examination. Donor bound exciton peak at 3.481 eV with full width half maximum of 41 meV was observed at 13K.

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References

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