Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films

실리콘을 첨가한 주석 산화물 박막의 전기 화학적 특성

  • Lee, Sang-Heon (Dept. of Inorganic Mat. Eng., Pusan National University) ;
  • Park, Geon-Tae (Dept. of Inorganic Mat. Eng., Pusan National University) ;
  • Son, Yeong-Guk (Dept. of Inorganic Mat. Eng., Pusan National University)
  • 이상헌 (부산대학교 무기재료공학과) ;
  • 박건태 (부산대학교 무기재료공학과) ;
  • 손영국 (부산대학교 무기재료공학과)
  • Published : 2002.04.01
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Abstract

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

Keywords

References

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