Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Silicon Melt Infiltration of Reaction-Bonded Silicon Carbide

반응소결 탄화규소에서 실리콘의 침윤향상

  • 신현익 (한국과학기술연구원 나노재료연구센터) ;
  • 김주선 (한국과학기술연구원 나노재료연구센터) ;
  • 이종호 (한국과학기술연구원 나노재료연구센터) ;
  • 김긍호 (한국과학기술연구원 나노재료연구센터) ;
  • 송휴섭 (한국과학기술연구원 나노재료연구센터) ;
  • 이해원 (한국과학기술연구원 나노재료연구센터)
  • Published : 2002.07.01
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Abstract

Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.

반응소결 탄화규소의 잔류 실리콘 양을 최소화하기 위해 3성분계 탄화규소 분말을 혼합하여 최밀 충전 반음소결 탄화규소를 제조하였다. 기지상의 충전밀도 증가로 인해 반응소결 중 실리콘의 불완전 침윤이 발생하였으며, 이로 인한 잔류 기공은 조대 탄화규소 입자의 표면을 따라 존재함을 확인하였다. 불완전 침윤은 승온 중 분해되지 않고 남은 산화물이 실리콘의 용융 온도 이상에서 분해되어 생긴 고립기공에 의한 것으로 확인되었다. 기지상의 표면에 존재하리라 여겨지는 산화물을 제거하기 위해 침윤전 열처리 및 부식처리를 통해 완전침윤을 달성하였다.

Keywords

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