Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Studies of point defects for annealed $AgInS_{2}/GaAs$ epilayer

  • Kwang-Joon Hong (Department of Physics, Chosun University) ;
  • Seung Nam Baek (Division of Metallurgical and Material Science Engineering, Chosun University) ;
  • Jun Woo Jeong (Department of Physics, Chosun University)
  • Published : 2002.08.01
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Abstract

The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.

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References

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