Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
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Numerical Analysis on Heat Transfer Characteristics in Silicon Boated by Picosecond-to-Femtosecond Ultra-Short Pulse Laser

펨토초급 극초단 펄스레이저에 의해 가열된 실리콘 내의 열전달 특성에 관한 수치해석

  • 이성혁 (서울대학교) ;
  • 이준식 (서울대학교 기계항공공학부) ;
  • 박승호 (홍익대학교 기계.시스템 디자인 공학과) ;
  • 최영기 (중앙대학교 기계공학부)
  • Published : 2002.10.01
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Abstract

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

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References

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