MEVVA ion Source And Filtered Thin-Film Deposition System

  • Liu, A.D. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University) ;
  • Zhang, H.X. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University) ;
  • Zhang, T.H. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University) ;
  • Zhang, X.Y. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University) ;
  • Wu, X.Y. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University) ;
  • Zhang, S.J. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University) ;
  • Li, Q. (The Institute of Low Energy Nuclear Physics, key Laboratory in University of Radiation Beam Technology & Material Modification, Beijing Radiation Center Beijing Normal University)
  • Published : 2002.12.01

Abstract

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

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