Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Effects of post-annealing and seeding layers on electrical properties of PLT thin films by MOCVD using ultrasonic spraying

후열처리 및 seeding 층이 초음파분무 MOCVD법에 의한 PLT 박막 제조 시 전기적 특성에 미치는 영향

  • 이진홍 (경북대학교 무기재료공학과) ;
  • 김기현 (경북대학교 무기재료공학과) ;
  • 박병옥 (경북대학교 무기재료공학과)
  • Published : 2002.10.01
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Abstract

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) thin films were prepared on ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. Effects of the post-annealing and the seeding layer on crystallization, microstructures and electrical properties of thin films were investigated. Dielectric constants of films increased due to the modification of crystallization and the changing of a surface morphology by applying the post-annealing. In addition, as the application of PT seed- ing layer offered nucleation sites to PLT thin films, electrical properties of films were enhanced by the increase of crys-tallinity and grain size. The dielectric constant of the films post-heated for 60 min and with a seeding layer was 213 at 1 kHz.

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) 박막을 초음파분무 MOCVD법으로 ITO-coated glass 기판 위에 제조하였다. PLT 박막 제조 시 후열처리 및 seeding layer가 결정화 및 미세구조, 전기적 특성에 대한 영향을 알아보았다. 후열처리에 의하여 박막의 결정성은 향상되었고 미세구조에도 영향을 주었으며, 전기적 특성은 이들 특성의 변화에 의해서 향상되었다. 그리고 seeding layer에 의한 핵 생성자리 제공에 의하여 결정성의 향상과 grain 크기의 증가에 의하여 박막의 전기적 특성 또한 향상되었다. Seeding layer를 가지고 60분 동안 후열처리를 한 박막이 가장 우수한 전기적 특성을 나타내었으며 이 박막의 1 kHz에서 유전 상수는 213을 나타내었다.

Keywords

References

  1. W. Liu and W. Zhu, 'Preparation and Orientation Control of $Pb_{1t}(Zr_{0.3}Ti_{0.7})O_{3}$ Thin Films by a Modified Solgel Process', Mater. Lett. 46 (2000) 239
  2. T. Masuda, Y. Miyaguchi, M. Tanimura, Y. Nishioka, K. Suu and N. Tani, 'Development of PZT Sputtering Method for Mass-production', Appl. Surf. Sci. 169 (2001) 539
  3. C. Guerrero, C. Ferrater, J. Roldan, V. Trtik, F. Sanchez and M. Varela, 'Epitaxial Ferroelelctric $PbZr_{X}Ti_{1-X}O_{3}$ Thin Films for Non-volatile Memory Applications', Microelectronics Reliability 40 (2000) 671
  4. H. Funakubo, K. Nagashima, K. Shinozaki and N. Mizutani, 'Comparison of Deposition Behavior of $Pb(Zr,Ti)O_{3}$ Films and its End-member-oxide Films Prepared by MOCVD', Thin Solid Films 368 (2000) 261
  5. L. Shi, S.B. Krupanidhi and G.H. Haertling, 'Development of Ferroelectric $Pb(Zr_{X}Ti_{1-X})O_{3}$ Thin Films by Metallo-organic Decomposition Process and Rapid Thermal Annealing', Integr, Fenoelectrics 1 (1992) 111
  6. J.K. Kim, N.K. Kim and B.O. Park, 'Effect of Ultrasound on Perovskite Pahse Developments, Microstructure, and Dielectric Properties of Sol-gel-processed $PbTiO_{3}$ Thin Films', Mater. Res. Bull. 35 (2000) 4995
  7. J.K. Kim, N.K. Kim and B.O. Park, 'Effects of Ultra-sound on Microstructure and Electrical Properties of $Pb(Zr_{0.5}Ti_{0.5})O_{3}$ Thin Films Prepared by Sol-gel Method', Mater. Lett. 39 (1999) 28
  8. J.H. Lee, S.W. Jung, N.K. Kim and B.O. Park, 'Electrical And Optical Properties Of $(Pb_{0.9}la_{0.1})tio_{3}$ Films Prepared by the Sol-gel Method with Ultrasound Application', Thin Solid Films 410 (2002) 38
  9. J.S. Lee, C.J. Kim, D.S. Yoon, W.J. Lee and K.S. No, 'Effects of seeding layer on orientation and phase formation of Sol-gel Derived Lanthanum-modified Lead Zirconate Titanate Films of Glass', Jpn. J. Appl. Phys. Pt. 1,34, 4A (1995) 1947
  10. J.H. Lee, Y.H. Kim, S.H. Lee and B.O. Park, 'Preparation and Properties of $PbTiO_{3}$ Thin Films by MOCYD Using Ultrasonic Spraying', J. Kor. Cryst. Growth 10, 3 (2000) 205
  11. N.M. Tallan, 'Electlical Conductivity in Ceramics and Glass' (1983) 463