KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Electrical and Photoluminescence Characteristics of Nanocrystalline Silicon-Oxygen Superlattice for Silicon on Insulator Application

  • Seo, Yong-Jin (Department of Electrical Engineering, Daebul University)
  • Published : 2002.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

Keywords

References

  1. L. T. Canham, Appl. Phys. Lett., Vol. 57, p.1046, 1990
  2. L. Esaki and R. Tsu, IBM 1. Res. and Develop., Vol. 14, p.61, 1970
  3. R. Tsu and L. Esaki, Appl Phys. Lett., Vol. 22, p.562, 1973
  4. R. Tsu, Q. Y. Ye, and E. H. Nicollian, SPIE., Vol. 1361, p.232, 1990
  5. Q. Y. Ye, R. Tsu, and E. H. Nicollian, Phys. Rev., Vol. B44, p.1806, 1991
  6. E. H. Nicollian and R. Tsu, J. Appl. Phys., Vol. 74, p.4020, 1993
  7. S. Y. Chou and A. E. Gordon, Appl. Phys. Lett., Vol. 60, p.1827, 1992
  8. R. Tsu, Nature, Vol. 364, p.9, 1993 https://doi.org/10.1038/364009a0
  9. R. Tsu, A. Filios, C. Lofgren, K. Dovidenko, and C. G. Wang, Elecctrochem and Solid State Lett., Vol. 1(2), p.80, 1998
  10. Y. J. Seo, J. C. Lofgrene, and R. Tsu, Appl. Phys. Lett., Vol. 79, p.788, 2001
  11. Y. J. Seo, and R. Tsu, Jpn. J. Appl. Phys., Vol. 40, p.4799, 2001
  12. R. Tsu, E. H. Nicollian, and A. Reisman, Appl. Phys. Lett., Vol. 55, p.1897, 1989
  13. Z. H. Lu, D. J. Lockwood, and J. M. Barlbeau, Nature, Vol. 378, p.258, 1995
  14. R. Tsu, A. Filios, and Q. Zhang, Advances in Science and Technology 27, Techna. SrI., Vol. 55, p.55, 1999