An Inset-Fed Microstrip Patch Antenna Having Modified Feeding Structure in the S-Band

급전구조를 변형한 5-Band용 INSET-FED 마이크로스트립 패치 안테나

  • 정동근 (금오공과대학교 전자공학부) ;
  • 이석문 (금오공과대학교 전자공학부) ;
  • 하천수 (금오공과대학교 전자공학부)
  • Published : 2002.10.01

Abstract

In this paper, a modified feeding structure for microstrip patch antenna is suggested for improving the performances. The proposed antenna has a gap between the transmission line and the recessed part of the radiating patch which makes a capacitive coupling. It shows higher 511(-l4dB) and lower cross polarization level(-2OdB) compare with the conventional inset ftd patch antenna while having a similar characteristics in another evaluating items. Experimental results are examined and considered to apply to the S-Band application, and the effectiveness has been confirmed by FDTD simulation and measurement simultaneously.

본 논문에서는 Inset-fed 안테나의 급전구조를 변형하여 기존의 Inset-fed 안테나 보다 그 성능을 향상시킨 안테나를 설계 및 제작하였다. Patch 안테나에서 gap 결합에 의한 급전 방식을 기초로 하여 변형된 급전 방식을 Inset-fed 안테나에 적용하였다. 설계된 안테나는 FDTD에 의한 simulation을 수행하여 최적치를 얻었으며 제작된 안테나는 공진 주파수에서 511은 -l4dB이고 cross polarization level은 -20dB의 특성을 보였다.

Keywords

References

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