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SAW Propagation Properties of GaN/Sapphire Structure

GaN/사파이어 구조에서의 표면탄성파 전단특성

  • Choi, Kook-Hyun (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Jin-Yong (Film Characterization and Properties Group Ceramics Division, NIST, Gaithersburg, USA) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University) ;
  • Chung, Su-Jin (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Tae-Kun (Department of Materials Science and Engineering, Seoul National University of Technology) ;
  • Kim, Young-Jin (Department of Materials Science and Engineering, Kyonggi University)
  • 최국현 (서울대학교 공과대학 재료공학부) ;
  • 김진용 ;
  • 김형준 (서울대학교 공과대학 재료공학부) ;
  • 정수진 (서울대학교 공과대학 재료공학부) ;
  • 이태근 (서울산업대학교 재료공학과) ;
  • 김영진 (경기대학교 첨단산업공학부 신소재전공)
  • Published : 2002.07.01

Abstract

To investigate the SAW properties of GaN films on c-plane sapphire substrates, we carried out both the experimental measuring and theoretical calculation. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer (IDT) structures, while SAW velocities were calculated by matrix methods. HVPSAW mode with the propagation velocity over 10,000m/s and PSAW mode as well as GSAW could be observed in experimental determination. These results were verified by matching with the theoretical calculation.

Keywords

References

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